品佳集團(tuán)積極推廣 NXP高效能超低噪聲的微波晶體管
品佳集團(tuán)近期積極推廣NXP高效能超低噪聲的微波晶體管,高頻應(yīng)用(20GHz以下)的NPN微波晶體管BFU725F 可提供極佳的高切換頻率、高增益和低噪聲等組合性能。藉由其超低的噪聲系數(shù),非常適用于敏感度高的 RF module 及 High performance mobile phones;此外,其高切換頻率的特色可用作 10GHz ~ 30GHz 之微波應(yīng)用如衛(wèi)星電視接收器及汽車防撞雷達(dá)的解決方案。
BFU725F 采用了創(chuàng)新的硅鍺碳 (SiGe:C) BiCMOS制程–QUBiC4X,這是專門為符合現(xiàn)實(shí)生活中的高頻應(yīng)用要求所設(shè)計(jì)的,可提供優(yōu)越的高功率增益及動態(tài)范圍組合性能,這個晶體管可謂將砷化鎵 (GaAs) 的性能及硅鍺碳的可靠性結(jié)為一體,但不需像使用砷化鎵組件時還要再增加負(fù)偏置電壓 (negative biasing voltages)的設(shè)計(jì),所以在產(chǎn)品應(yīng)用上更能為客戶帶來成本效益,此產(chǎn)品目前巳有樣品可提供申請,預(yù)計(jì)于2007年第三季可量產(chǎn)供貨。
Key Features
‧Very low noice of 0.69dB at 6GHz
‧High Maximum stable gain (Gms) 27.8dB at 1.8GHz
‧High switching frequency – fT > 100GHz, fmax > 150GHz
‧Plastic surface mounted package, SOT343F
Key Benefits
‧Very low noise of 0.4dB at 1.8GHz
‧High gain of 10dB at 18GHz
‧SiGe:C process ensures high switching frequency
‧Cost-effective alternative to GaAs devices
Key Applications
‧GPS system
‧DECT Phone
‧2nd stage LNA and mixer in DBS and LNB
‧Satellite Radio
‧WLAN and CDMA applications
‧Low-noise microwave applications
Quick reference date for the BFU725F (SOT343F)
Transition frequency as a function of collector current (typical values)
Gain as a function for frequency (typical values)
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